【展商風采】深圳市納設智能裝備股份有限公司邀您參加第六屆亞太碳化硅及相關材料國際會議

尊敬的業內同仁，您好！

深圳市納設智能裝備股份有限公司誠摯地邀請您參加11月25日-27日在中國鄭州中原國際會展中心會議中心舉辦的第六屆亞太碳化硅及相關材料國際會議。

Distinguished delegates,

ShenZhen Naso Tech Co.,Ltd.sincerely invite you to participate in the 6th Asia-Pacific Conference on Silicon Carbide and Related Materials(APCSCRM 2025)!

APCSCRM 2025 will be grandly held in Central China International Exhibition Center Zhengzhou,Henan  Province,China,on  November  25-27,2025,for  better   accelerating  the academic research,technological progress and industrial upgrading of silicon carbide and  other wide bandgap semiconductor industries in the Asia-Pacific region.

碳化硅外延設備是用于碳化硅芯片生產的核心環節—外延層生長的專用設備，這一過程是制造電力電子器件，如二極管、功率半導體器件的關鍵步驟。

高品質外延工藝制備，厚度均勻性：≤1%，濃度均勻性：≤2%，缺陷密度：≤0.1/cm^2；

兼容AGV&天車，可實現全自動化配套，設備月產能>1200pcs，維護周期≧500 um。

雙腔獨立調控提升了生產效率和靈活性，為規模化量產設計。

Silicon Carbide (SiC) Epitaxial Reactor is specialized machinery used for the epitaxial layer growth stage—a core process in SiC chip production. This step is critical for manufacturing power electronics, such as diodes and power semiconductor devices .

High-Quality Epitaxial Process: Delivers exceptional film uniformity with thickness uniformity ≤1% and doping concentration uniformity ≤2%. The process maintains a low defect density ≤0.1 cm?2.

Automation & High Throughput: Compatible with AGVs and OHT systems for full automation integration. The system boasts a monthly equipment capacity of >1,200 pieces .

Robust Maintenance Cycle: Engineered for extended operation, with a maintenance interval of ≥500 μm of cumulative epitaxial film growth.

Dual-Chamber Independent Control: Features two independently controlled reaction chambers. This design significantly enhances production efficiency and operational flexibility, supporting high-volume manufacturing requirements.

原子層沉積設備根據表面化學自限制反應原理,在高速率的薄膜生長過程中保持薄膜的均勻性,針對性解決鈣鈦礦太陽能電池制造中薄膜均勻性和電池穩定性問題。

雙技術路線并行，推出空間型（Spatial ALD）與時間型（Temporal ALD）兩類設備平臺，覆蓋從研發到量產的全場景需求。

高密度噴淋孔布局，配合特有氣體擴散路徑，鍍膜實現更高的均勻性和更快速的全面覆蓋；

全系列設備鍍膜厚度不均勻性<5%, Sn02薄膜折射率>1.85。

Atomic Layer Deposition (ALD) Equipment leverages the principle of self-limiting surface chemical reactions to maintain exceptional film uniformity during high-rate thin-film growth. This technology specifically addresses critical challenges in perovskite solar cell manufacturing, namely film uniformity and device long-term stability.

Dual-Technology Platforms: The company offers both Spatial ALD (S-ALD) and Temporal ALD (T-ALD) equipment platforms. This dual approach ensures comprehensive coverage of diverse application needs, from fundamental R&D to high-volume manufacturing .

Advanced Gas Delivery System: The system incorporates a high-density showerhead design paired with a proprietary gas distribution pathway. This configuration ensures superior film uniformity and enables rapid, complete surface coverage during deposition.

Superior Process Performance: The entire equipment series consistently delivers a film thickness non-uniformity of less than 5%. For SnO? films, it achieves a refractive index greater than 1.85, indicating high material quality and density.