【展商風(fēng)采】沉積半導(dǎo)體材料（南通）有限公司邀您參加第六屆亞太碳化硅及相關(guān)材料國(guó)際會(huì)議

尊敬的業(yè)內(nèi)同仁，您好！

沉積半導(dǎo)體材料（南通）有限公司誠(chéng)摯地邀請(qǐng)您參加11月25日-27日在中國(guó)鄭州中原國(guó)際會(huì)展中心會(huì)議中心舉辦的第六屆亞太碳化硅及相關(guān)材料國(guó)際會(huì)議。

Distinguished delegates,

Dynamic Deposit Semiconductor materials (Nantong)Co.,Ltd. sincerely invite you to participate in the 6th Asia-Pacific Conference on Silicon Carbide and Related Materials(APCSCRM 2025)!

APCSCRM 2025 will be grandly held in Central China International Exhibition Center Zhengzhou,Henan  Province,China,on  November  25-27,2025,for  better   accelerating  the academic research,technological progress and industrial upgrading of silicon carbide and  other wide bandgap semiconductor industries in the Asia-Pacific region.

CVD 超高純多孔TaC塊體：純度超99.999%，專(zhuān)為晶體生長(zhǎng)環(huán)節(jié)設(shè)計(jì)，有效應(yīng)對(duì)“晶體長(zhǎng)厚難”與“碳包裹”等行業(yè)痛點(diǎn)，是高性能晶體材料的理想選擇。

CVD Ultra-High Purity Porous TaC Bulk：The purity exceeds 99.999%, and it is specifically designed for the crystal growth process. It effectively addresses industry pain points such as "difficulty in growing crystals to sufficient thickness" and "carbon inclusion", making it an ideal choice for high-performance crystal materials.

12英寸CVD TaC涂層環(huán)：支持兩次以上重復(fù)使用，性能穩(wěn)定如初，顯著降低使用成本，提升工藝經(jīng)濟(jì)性。

12-Inch CVD TaC Coated Ring：It supports more than two cycles of reuse, maintains consistent performance as initial, significantly reduces operational costs, and enhances process economic efficiency.

多片式SiC外延用TaC大盤(pán)：專(zhuān)為SiC EPI工藝設(shè)計(jì)，大尺寸、高一致性，助力實(shí)現(xiàn)高效、穩(wěn)定的外延生產(chǎn)。

Multi-Wafer TaC Large Tray for SiC Epitaxy：It is specifically designed for the SiC EPI process, featuring large size and high uniformity, which facilitates efficient and stable epitaxial production.

異質(zhì)基材與圖形化TaC技術(shù)：創(chuàng)新實(shí)現(xiàn)SiC襯底與圖形化CVD TaC的精準(zhǔn)結(jié)合，為復(fù)雜器件結(jié)構(gòu)提供可靠材料解決方案。

Heterogeneous Substrates and Patterned TaC Technology:It innovatively enables the precise integration of SiC substrates and patterned CVD TaC, delivering reliable material solutions for complex device structures.

GaN外延用大尺寸托盤(pán)及配件:涵蓋Celling、Coverstar等關(guān)鍵配件，搭配我司獨(dú)創(chuàng)的低密度高導(dǎo)熱石墨基材，具備低開(kāi)裂率、穩(wěn)定懸浮性與卓越溫度均勻性，助力GaN外延工藝實(shí)現(xiàn)更高良率與穩(wěn)定性。

Large-Size Trays and Accessories for GaN Epitaxy:It covers key components such as Celling and Coverstar, and is matched with our company's original low-density and high-thermal-conductivity graphite substrate. It features low cracking rate, stable suspendability and excellent temperature uniformity, facilitating the GaN epitaxial process to achieve higher yield rate and stability.