膜厚超過20μm，膜厚均勻性（以最大偏差計）優于20%，最佳批次均勻性可達5%以內，與4英寸HVPE設備的外延水平相當；
生長速率穩定在10~20 μm/h；
藍寶石襯底上的異質外延形貌均勻性表現良好。
以上數據充分表明，8英寸HVPE外延生長過程具備出色的可控性與一致性。
Test results show:
Film thickness exceeds 20 μm
Film thickness uniformity (based on maximum deviation) is better than 20%, with the best batch uniformity reaching within 5% – comparable to the epitaxial level of 4-inch HVPE equipment
Growth rate is stable at 10–20 μm/h
Heteroepitaxial morphology uniformity on sapphire substrates is well demonstrated
These data fully indicate that the 8-inch HVPE epitaxial growth process offers excellent controllability and consistency.
Why is this breakthrough noteworthy?
In gallium oxide power devices, the epitaxial layer serves as the drift region and is critical for withstanding high voltage. Its thickness is positively correlated with the device’s breakdown voltage. For example, 10,000V-class devices typically require an epitaxial layer thickness of several tens of micrometers. Conventional MOCVD epitaxy, with a growth rate of only 1–2 μm/h, is significantly inefficient for such requirements. HVPE epitaxy, by contrast, offers an ideal and advantageous alternative.
Shandong Liguan achievement – high uniformity and consistency at the 8-inch scale – lays a solid technical foundation for advancing gallium oxide power devices toward larger dimensions and higher voltage classes.
Shandong Liguan remains dedicated to the R&D and manufacturing of high-end semiconductor equipment, delivering excellence through professional craftsmanship and creating lasting value for customers with dedication.
來源： 山東力冠微電子裝備
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