可靠性研究——由單熱電子或熱空穴導致的硅-二氧化硅界面Si-H斷裂

該模型考慮了在Si/二氧化硅界面上，Si/H鍵斷裂時產生的界面態。考慮三種不同的機制：

（1）場增強熱退化

（2）單粒子 (SP) 過程

（3）多粒子(MP) 過程

Thefield-enhanced thermal degradation process can also be studied by using the ReactionDiffusion model described above with a suitable choice of parameters. 

The SP process is the breaking of the Si-H bond via a single hot electron or hole. Thereaction rate for this process at position r is given by：

where is the anti-symmetric part of the carrier distribution function, g(E) is the densityof states, and ug is the group velocity.

The device is biased into the stressing state using the drift-diffusion model. Then, the carrierdistribution function is obtained by solving the Boltzmann Transport Equation (BTE) in thesemiconductor with suitable boundary conditions.

You specify BTE.PP.E on the MODELSstatement and DEVDEG.GF.E on the SOLVE statement where you want the BTE solution forelectrons.

For holes, you specify BTE.PP.H on the MODELS statement and DEVDEG.GF.H onthe SOLVE statement. You also specify stressing times using the TD1, TD2 ... TD10parameters on the same SOLVE statement and the name of a structure file stem. Thedegradation charge is calculated at the specified stressing times, TDn, according to theformulae

For electrons, is negative interface charge density. For holes, is positive interfacecharge density. NTA.SP and NTD.SP are specified on the DEGRADATION statement.

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