芯動力人才計劃?
? ? 第122期國際名家講堂
用于IGBTs和WBG功率器件的柵極驅動芯片
Gate Drive ICs for IGBTs?and?
WBG Power Devices?
活動安排
時間：11月23-24日（周四至周五）
地點：廈門（具體地點詳見報到通知）?
專家：Prof.吳偉東——加拿大多倫多大學教授、多倫多納米制造中心主任
語言：全英文授課，少數內容可中英文結合，若條件允許采用中文答疑和交流。
組織單位
指導單位：工業和信息部人才交流中心、福建省科學技術協會
主辦單位：芯動力人才計劃?、廈門理工學院、福建省集成電路與系統科技經濟融合服務平臺
支持單位：廈門市集成電路行業協會、廈門火炬大學堂、海滄IC公共設計服務平臺、國際半導體產業協會（SEMI China）、新微創源孵化器、上海集成電路技術與產業促進中心、摩爾精英、求是緣半導體聯盟等
支持媒體：芯榜、電子創新網、科鈦網等
講堂導讀
02:49
日程安排
本期摘要
Power MOSFETs, IGBTs and wide bandgap (WBG) power devices are widely used in power electronic systems. As the Si-based power device technology is reaching its theoretical performance limit, more and more efforts have been placed on the gate driver design to further improve the device performance. Recent trends for smart gate driver ICs are to integrate a variety of complex functions to provide better protection, monitoring, and local control of the switching behaviour of the power devices. This course reviews the basic gate driving requirements and a few commercially available gate driver ICs. More importantly, in-depth studies on examples of recent smart integrated gate driver ICs will be offered. In particular, smart gate driver ICs with innovative integrated features such as indirect/non-intrusive collector current sensing, on-chip CPU for digital processing, dynamic gate driving strength for EMI suppression, short circuit protection, aging detection, etc. will be covered.
本期簡介
1. ?Basic Gate Drive Requirements
This session begins with a review of basic gate drive requirements and the switching behavior of power MOSFETs, IGBTs, and wide bandgap (WBG) power devices such as SiC MOSFETs, and GaN HEMTs. The turn-on/off processes of a typical IGBTs will be examined with special attention on the Miller plateau, dv/dt, di/dt, and ringing oscillation. Several commercially available gate driver ICs will be used to illustrate the typical functionality and protection features. These includes gate current sourcing/sinking, external gate resistor, level shifting, dead-time control, and under voltage lockout (UVLO).
2. ?Smart Gate Driver IC Design Examples
Recent trend in gate driver design includes many intelligent?features such as?on-chip CPU for dynamic control, flexible?gate voltage levels, multi-stage driving speed for slew-rate control, precise?timing control, current sensing capability for close-loop regulations, and active gate driving mode with continuous optimized?dead-time. This session?provides an introduction to various smart gate driver designs.?The first topic focuses on IGBT gate drivers with indirect/non-intrusive collector current sensing. This is useful for both monitoring and protection of IGBTs. The second topic emphasizes the benefits of dynamic gate driving on suppressing EMI and enhancing power conversion efficiency. The final topic highlights the importance of precision timing and dead-time correction. This is especially critical for GaN and SiC power devices where the switching operation can be in the multi-MHz range, requiring pico-second resolution in the dead-time adjustment.
We expect that, after attending this short course, the audience will obtain a useful insight on basic gate driver requirements and gain exposure to future design trends in smart gate driver ICs.
報名方式
請掃描上方二維碼報名
注冊費用
1.線下參訓
Standard：6200元/人；
Early Bird（11月12日前付款）: 5200元/人；
IC Power? Special（芯動力人才計劃?合作單位 ）：5200元/人；
*芯動力人才計劃?合作單位需與主辦方簽訂相關合作協議。
2.線上參訓
Standard：24800元/賬號；
Early Bird（11月12日前付款）:20800?元/賬號；
IC Power? Special（芯動力人才計劃?合作單位 ）：20800元/賬號；
*芯動力人才計劃?合作單位需與主辦方簽訂相關合作協議。
注意事項
*注冊費用包含教材、午餐、茶點，其他費用（住宿、交通等）請自理。
收費方式
國信芯世紀南京信息科技有限公司是工業和信息化部人才交流中心的全資公司,負責收取注冊費并開具發票，發票內容為培訓費。請于2023年11月20日（周一）前將注冊費匯至以下賬戶或掃描付款碼進行付款（付款備注：第122期+單位名稱+姓名）。
戶? ?名：國信芯世紀南京信息科技有限公司
開戶行：中國工商銀行股份有限公司南京浦珠路支行
賬? ?號：4301014509100090749
專家介紹
吳偉東
Wai Tung Ng
吳偉東分別于1983年、1985年和1990年在多倫多大學獲得電氣工程學士、碩士、博士學位。吳教授目前就職于多倫多大學電氣與計算機工程系，他還是多倫多納米制造中心（TNFC）和開放獲取研究機構的主任。吳教授是功率半導體器件和智能功率集成電路領域的知名研究員。他的研究小組展示了許多世界首創的創新設計，包括具有可調整輸出級的數字可重新配置DC-DC功率轉換器[IISPSD 2006]、超結功率FinFET[IEDM 2010]，以及一系列用于絕緣柵雙極晶體管（IGBT）和氮化鎵功率晶體管的智能柵極驅動器集成電路。目前，吳教授的團隊正在積極推廣數字可重構柵極驅動電路，以改善GaN和碳化硅（SiC）功率晶體管的開關特性。其中包括許多新穎的功能，如一步空載校正、間接電流傳感、抑制電磁干擾的動態驅動強度、智能電源模塊的液冷封裝等。
Wai Tung Ng (M’90, SM’04) received his B.A.Sc., M.A.Sc., and Ph.D. degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively. Prof. Ng is with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director for the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. Ng is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Currently, Prof. Ng’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc.
報名方式
請掃描上方二維碼報名
國際名家講堂系列活動剪影
往期相關主題回顧
第89期國際名家講堂：
用于IGBTs和WBG功率器件的柵極驅動芯片
第108期國際名家講堂：
智能功率集成電路及應用
聯系方式
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郜老師 010-68208711
內訓與咨詢
人才服務和賦能
園區與政府平臺共建
中小企業產業上下游服務鏈
征集并納入芯動力人才計劃?專家庫
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朱部長 010-68207851
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